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FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

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FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247

Name: FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO247
Brand: Original
Price: 1 USD

Quality FCH47N60F 47N60F N Channel MOSFET 600 V 47A 417W Through Hole TO-247 for sale

Model Number : FCH47N60F

Place of Origin : Guangdong, China

Brand Name : Original

Packaging Details : Standard carton

MOQ : 1

Price : Negotiable

Brand : MOSFET N-CH 600V 47A TO-247

Power - Max : 417W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Through Hole

Package / Case : TO-247-3

FET Type : N-Channel

FET Feature : Standard

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 47A (Tc)

Rds On (Max) @ Id, Vgs : 73mOhm @ 23.5A, 10V

Vgs(th) (Max) @ Id : 5V @ 250uA

Gate Charge (Qg) (Max) @ Vgs : 270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 8000pF @ 25V

Drive Voltage (Max Rds On, Min Rds On) : 10V

Vgs (Max) : ±30V

Stock : In Stock

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High Performance MOSFET for Discrete Semiconductor Applications

Introducing the SuperFET FCH47N6 from onsemi in a TO-247-3 Package

Looking for a powerful and reliable MOSFET for your discrete semiconductor needs? Look no further than the SuperFET FCH47N6 from onsemi. Designed with cutting-edge MOSFET (Metal Oxide) technology, this N-Channel transistor delivers an impressive drain to source voltage of 600 V and a continuous drain current of 47A at 25°C.

With a maximum Rds On of just 70mOhm and a maximum gate charge of only 270 nC at 10V, the FCH47N6 provides exceptional efficiency, while the wide operating temperature range (-55°C to 150°C) ensures durability in even the most extreme conditions. This powerful MOSFET is compatible with through-hole mounting and comes in a TO-247-3 package. Don't miss out on the impressive power and reliability of the SuperFET FCH47N6 for discrete semiconductor applications.

Category	Discrete Semiconductor Products
Category	Transistors - FETs, MOSFETs - Single
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	73mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Base Product Number	FCH47

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